GaN Systems GS61004B GaN HEMT Complete Teardown Report 2018 – ResearchAndMarkets.com

The “GaN
Systems GS61004B GaN HEMT Complete Teardown Report” report has
been added to ResearchAndMarkets.com’s offering.

There are only two main players in low-voltage GaN: EPC and GaN Systems,
a fact mainly due to the complexity of using a standard package with low
losses. GaN Systems wants to compete with EPC, the market leader, in the
low-voltage HEMT market. System Plus Consulting unveils the GS61004B
from GaN Systems, the latest device driving 100V and optimized for AC-DC
converters and high-frequency, high-efficiency power conversion.

The GS61004B from GaN Systems is a GaN-on-silicon HEMT transistor
packaged in the GaNpx embedded die package. This embedded die package is
unique to the market in that it allows for high current capability. The
GS61004B has a die size of around 4 mm2 and carries up to 45A, which
means more than 10A/mm2, almost 3x higher than the competition.

The GS61004B is packaged in an innovative embedded die package developed
by AT&S (ECP process). This package has no wire bonding, which reduces
inductance, and its design increases heat management. The die’s new
position in the package facilitates enhanced thermal dissipation, and a
simplification of the process reduces manufacturing time and cost.

Based on a complete teardown analysis, this report also provides an
estimated production cost for the epitaxy and the package. Moreover,
this report compares standard 100V Si MOSFETs and low-voltage GaN on Si

Key Topics Covered:

1. Overview / Introduction

2. Company Profile

3. Physical Analysis

4. Transistor Manufacturing Process

5. Cost Analysis

6. Price Analysis

7. Comparison

Companies Mentioned

For more information about this report visit https://www.researchandmarkets.com/research/78npqp/gan_systems?w=4

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