Carbide (SiC) MOSFET Complete Teardown Report” report has been
added to ResearchAndMarkets.com’s offering.
The market outlook for SiC devices is promising, with a compound annual
growth rate (CAGR) of 28% from 2016-2020. This will increase to 40% from
2020-2022 due to growth among automotive and industrial applications. In
total, the SiC market will exceed $1B in 2022.
In the energy conversion sector, SiC devices have an actual value of
$250M, which will increase by around 28% in 2022. The reason for this
relates to market forces pushing for loss reduction, not only for the
sake of improved efficiency but also for smaller packages.
Littelfuse, Inc., a leader in circuit protection, recently introduced
its first series of silicon carbide (SiC) MOSFETs. This is the latest
addition to the company’s power semiconductor line, realized through a
majority investment in Monolith Semiconductor Inc., a SiC technology
The LSIC1MO120E0080, with a voltage rating of 1200V and ultra-low (80m?)
on-resistance, is the first organically designed, developed, and
manufactured SiC MOSFET to be released by this partnership, using all of
X-Fab’s know-how and experience, along with its 150mm SiC production
line in Lubbock.
Supported by a full component and package teardown, this report reveals
Littelfuse’s innovative assets, which bring several advantages to the
1200V SiC MOSFET: most notably, superior gate-oxide reliability,
switching performance, and conduction losses.
This report also details the complete bill of materials (BoM), die
manufacturing, and packaging processes. Included too are an estimated
manufacturing cost, a comparison with similar products from
STMicroelectronics and CREE, and an estimated sales price of the
Key Topics Covered:
MOSFET Manufacturing Process
For more information about this report visit https://www.researchandmarkets.com/research/b36sk6/silicon_carbide?w=4
View source version on businesswire.com: https://www.businesswire.com/news/home/20180619005667/en/