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UnitedSiC UJN1205K 1200V SiC JFET Complete Teardown Report 2018 – ResearchAndMarkets.com

The “UnitedSiC
UJN1205K 1200V SiC JFET Complete Teardown Report” report has
been added to ResearchAndMarkets.com’s offering.

This report presents a deep technology analysis of the UJN1205K device,
assembled in a TO247 package. Also included is a production cost
analysis, and comparisons with its JFET counterpart from SemiSouth. This
comparison highlights the differences in the design technology choices
and the electrical/geometrical parameters.

Silicon carbide-based device penetration is expanding in industrial
applications. JFET is one of them. UnitedSiC offers two types of
medium-voltage (1200V) SiC JFETs, with the UJN1205K achieving the
highest current (38A).

This JFET is marketed as the ideal solution for circuit protection
because of its ability to handle peak temperatures and limit current by
a rapid decrease due to self-heating. The device also offers a low
on-resistance of 45m?, but a very high current density of 4.08 A/mm2 at
25C, thanks in large part to its trench structure with special openings
for contacts.

UnitedSiC employs in its JFET structure a unique angled implantation
process to improve threshold voltage control, and a silicide for both
gate and source contact to boost contact resistance.

Owing to its design, the device’s cost is very competitive regarding its
special steps.

Also, the packaging is optimized for cost-savings.

Key Topics Covered:

1. Introduction

2. Company Profile

3. Physical Analysis

4. Manufacturing Process

5. Cost Analysis

6. Sales Price

7. Comparison of JFETs from UnitedSiC and SemiSouth

8. Company Services

For more information about this report visit https://www.researchandmarkets.com/research/z3z73w/unitedsic?w=4

View source version on businesswire.com: https://www.businesswire.com/news/home/20180619005588/en/